Semiconductors

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Journal description

Title Titel
Semiconductors
 
e-ISSN
1090-6479
 
ISSN
1063-7826
 
Publisher Herausgeber
PLEIADES PUBLISHING INC
 
Publisher's Address Herausgeber Adresse
PLEIADES HOUSE, 7 W 54 ST, NEW YORK, United States, NY, 10019
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Results 1-8 of 8 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Vexler, M. I. ; Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Sing, Yew Kwang ; Shenp, Ang Diing ; Fedorov, V. V. ; Isakov, D. V. A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel StructuresArtikel Article2013
2Vexler, M. I. ; Illarionov, Yu. Yu. ; Tyaginov, S. E. ; Grasser, T. Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS DevicesArtikel Article 2015
3Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Analysis of the Features of Hot-Carrier Degradation in FinFETsArtikel Article 2018
4Sverdlov, V. ; El-Sayed, E. A.-M. ; Kosina, H. ; Selberherr, S. Ballistic Conductance in a Topological 1T '-MoS₂ NanoribbonArtikel Article 2020
5Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETsArtikel Article 2018
6Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor StructuresArtikel Article 2018
7Vexler, M. I. ; Illarionov, Yu. Yu. ; Grekhov, I. V. Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron TunnelingArtikel Article 2017
8Banshchikov, A. G. ; Illarionov, Yu. Yu. ; Vexler, M. I. ; Wachter, S. ; Sokolov, N. S. Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide LayerArtikel Article 2019