TYAGINOV, Stanislav

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TYAGINOV, Stanislav
 
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Results 81-100 of 100 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
81Starkov, Ivan ; Tyaginov, Stanislav ; Enichlmair, Hubert ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping MeasurementsArtikel Article2011
82Starkov, Ivan ; Tyaginov, S. E. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo SimulationsKonferenzbeitrag Inproceedings2010
83Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo SimulationsKonferenzbeitrag Inproceedings2010
84Starkov, Ivan ; Tyaginov, S. E. ; Enichlmair, H. ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Ceric, Hajdin ; Grasser, Tibor HC Degradation Model: Interface State Profile-Simulations vs. ExperimentKonferenzbeitrag Inproceedings2010
85Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, Jong Mun ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2010
86Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, J.M. ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation ModelingArtikel Article2010
87Tyaginov, S.E. ; Vexler, M.I. ; El Hdiy, A. ; Gacem, K. ; Zaporojtchenko, V. Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel StructuresArtikel Article2010
88Tyaginov, S. E. ; Sverdlov, Viktor ; Gös, Wolfgang ; Grasser, Tibor Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle FluctuationsKonferenzbeitrag Inproceedings2009
89Starkov, Ivan ; Tyaginov, S. E. ; Grasser, Tibor Green's Function Asymptotic in Two-Layered Periodic MediumKonferenzbeitrag Inproceedings2009
90Sverdlov, Viktor ; Baumgartner, Oskar ; Tyaginov, S. E. ; Windbacher, Thomas ; Selberherr, Siegfried Subband Structure in Ultra-Thin Silicon FilmsKonferenzbeitrag Inproceedings2009
91Tyaginov, S. E. ; Sverdlov, Viktor ; Gös, Wolfgang ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz ; Grasser, Tibor Si-O Bond-Breakage Energetics under Consideration of the Whole CrystalKonferenzbeitrag Inproceedings2009
92Tyaginov, S. E. ; Sverdlov, Viktor ; Gös, Wolfgang ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz ; Grasser, Tibor Impact of the Surrounding Network on the Si-O Bond-Breakage EnergeticsKonferenzbeitrag Inproceedings2009
93Tyaginov, S. E. ; Gös, Wolfgang ; Grasser, Tibor ; Sverdlov, Viktor ; Schwaha, Philipp ; Heinzl, Rene ; Stimpfl, Franz Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole CrystalKonferenzbeitrag Inproceedings2009
94Tyaginov, S. E. ; Sverdlov, Viktor ; Gös, Wolfgang ; Grasser, Tibor Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage RateKonferenzbeitrag Inproceedings2009
95Vexler, M. I. ; Sokolov, N. S. ; Suturin, S. M. ; Banshchikov, A. G. ; Tyaginov, S. E. ; Grasser, T. Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride LayerArtikel Article2009
96Tyaginov, S E ; Vexler, M I ; Sokolov, N S ; Suturin, S M ; Banshchikov, A G ; Grasser, T ; Meinerzhagen, B Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride FilmsArtikel Article2009
97Tyaginov, Stanislav ; Sverdlov, Viktor ; Starkov, Ivan ; Gös, Wolfgang ; Grasser, Tibor Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage RateArtikel Article2009
98Tyaginov, S. E. ; Vexler, M.I. ; El Hdiy, A. ; Gacem, K. ; Zaporojtchenko, V. Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel StructuresKonferenzbeitrag Inproceedings2008
99Goes, Wolfgang ; Karner, Markus ; Tyaginov, Stansilav ; Hehenberger, Philipp ; Grasser, Tibor Level shifts and gate interfaces as vital ingredients in modeling of charge trappingKonferenzbeitrag Inproceedings2008
100Yoder, P.D. ; Vexler, M.I. ; Shulekin, A.F. ; Asli, Nouri ; Gastev, S. V. ; Grekhov, I.V. ; Seegebrecht, P. ; Tyaginov, Stanislav ; Zimmermann, Horst Luminescence spectra of an Al/SiO₂/p-Si tunnel metal-oxide-semiconductor structureArtikel Article 2005