Full name Familienname, Vorname
Illarionov, Yury
 
Main Affiliation Organisations­zuordnung
 

Results 81-90 of 90 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
81Illarionov, Yury Yu. ; Bina, Markus ; Tyaginov, Stanislav E. ; Grasser, Tibor An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETsArtikel Article2014
82Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
83Kareva, G.G. ; Vexler, M. I. ; Illarionov, Yury Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling DiodeKonferenzbeitrag Inproceedings 2013
84Illarionov, Yury ; Vexler, M. I. ; Fedorov, V. V. ; Suturin, S. M. ; Isakov, D. V. ; Grekhov, I.V. Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on SiliconKonferenzbeitrag Inproceedings2013
85Tyaginov, S. E. ; Osintsev, Dimitry ; Illarionov, Yury ; Park, J.M. ; Enichlmair, H. ; Vexler, M. I. ; Grasser, Tibor Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configurationKonferenzbeitrag Inproceedings2013
86Vexler, M. I. ; Illarionov, Yury ; Suturin, S. M. ; Fedorov, V. V. ; Sokolov, N. S. Tunnel charge transport in Au/CaF2/Si(111) systemKonferenzbeitrag Inproceedings2013
87Illarionov, Yu.Yu. ; Vexler, M.I. ; Fedorov, V.V. ; Suturin, S.M. ; Sokolov, N.S. Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride LayerArtikel Article2013
88Vexler, M. I. ; Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Sing, Yew Kwang ; Shenp, Ang Diing ; Fedorov, V. V. ; Isakov, D. V. A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel StructuresArtikel Article2013
89Kareva, G.G. ; Vexler, M.I. ; Illarionov, Yu.Yu. Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling DiodeArtikel Article2013
90Illarionov, Yury ; Tyaginov, S. E. ; Bina, Markus ; Grasser, Tibor A method to determine the lateral trap position in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings 2013