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Full name Familienname, Vorname
Knobloch, Theresia
 
Main Affiliation Organisations­zuordnung
 

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Results 1-20 of 60 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ TransistorsArticle Artikel Sep-2023
2Mounir, Ahmed ; Iniguez, Benjamin ; Lime, Francois ; Kloes, Alexander ; Knobloch, Theresia ; Grasser, Tibor Compact I-V Model for back-gated and double-gated TMD FETsArticle Artikel Sep-2023
3Ravichandran, Harikrishnan ; Knobloch, Theresia ; Pannone, Andrew ; Karl, Alexander ; Stampfer, Bernhard ; Waldhör, Dominic ; Zheng, Yikai ; Sakib, Najam ; Karim Sadaf, Muhatsim ; Pendurthi, Rahul ; Torsi, Riccardo ; Robinson, Joshua A. ; Grasser, Tibor ; Das, Saptarshi Observation of Rich Defect Dynamics in Monolayer MoS₂Article Artikel 25-Jul-2023
4Knobloch, Theresia ; Grasser, Tibor Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional MaterialsInproceedings Konferenzbeitrag 28-May-2023
5Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsInproceedings Konferenzbeitrag28-May-2023
6Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI CircuitsArticle Artikel 19-May-2023
7Tselios, Konstantinos ; Knobloch, Theresia ; Michl, Jakob Daniel ; Waldhör, Dominic ; Schleich, Christian ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ TransistorsInproceedings Konferenzbeitrag Oct-2022
8Knobloch, Theresia ; Grasser, Tibor Scalable and Reliable Gate Insulators for 2D Material-Based FETsPräsentation Presentation4-Jul-2022
9Knobloch-2022-Nature Electronics-vor.pdf.jpgKnobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury ; Wang, Zhenxing ; Otto, Martin ; Filipovic, Lado ; Waltl, Michael ; Neumaier, Daniel ; Lemme, Max Christian ; Grasser, Tibor Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningArticle Artikel Jun-2022
10Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor Inorganic Molecular Crystals for 2D ElectronicsArtikel Article 2022
11Knobloch, Theresia Enhancing the Reliability of 2D Nanoelectronics Guided by Physical ModelingPräsentation Presentation2022
12Knobloch Theresia - 2022 - On the electrical stability of 2D material-based...pdf.jpgKnobloch, Theresia On the electrical stability of 2D material-based field-effect transistorsThesis Hochschulschrift 2022
13Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
14Ducry, Fabian ; Waldhoer, Dominic ; Knobloch, Theresia ; Csontos, Miklos ; Jimenez Olalla, Nadia ; Leuthold, Juerg ; Grasser, Tibor ; Luisier, Mathieu An Ab Initio Study on Resistance Switching in Hexagonal Boron NitrideArtikel Article 2022
15Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor Challenges for Nanoscale CMOS Logic Based on Two-Dimensional MaterialsArtikel Article 2022
16Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor Finding Suitable Gate Insulators for Reliable 2D FETsKonferenzbeitrag Inproceedings2022
17Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 InsulatorsKonferenzbeitrag Inproceedings2022
18Illarionov, Yury ; Knobloch, Theresia ; Uzlu, B. ; Sokolov, N. S. ; Lemme, Max C ; Grasser, Tibor Highly stable GFETs with 2nm crystalline CaF2 insulatorsPräsentation Presentation2022
19Knobloch, Theresia ; Illarionov, Yury ; Grasser, Tibor Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level TuningKonferenzbeitrag Inproceedings2022
20Illarionov, Yury ; Knobloch, Theresia ; Waltl, Michael ; Smets, Q ; Panarella, L ; Kaczer, Ben ; Schram, Tom ; Brems, S ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETsPräsentation Presentation2022