Name Card

Full name Familienname, Vorname
Knobloch, Theresia
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 54 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Knobloch, Theresia ; Grasser, Tibor Scalable and Reliable Gate Insulators for 2D Material-Based FETsPräsentation Presentation4-Jul-2022
2Knobloch-2022-Nature Electronics-vor.pdf.jpgKnobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury ; Wang, Zhenxing ; Otto, Martin ; Filipovic, Lado ; Waltl, Michael ; Neumaier, Daniel ; Lemme, Max Christian ; Grasser, Tibor Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningArticle Artikel Jun-2022
3Knobloch, Theresia ; Illarionov, Yury ; Grasser, Tibor Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level TuningKonferenzbeitrag Inproceedings2022
4Illarionov, Yury ; Knobloch, Theresia ; Waltl, Michael ; Smets, Q ; Panarella, L ; Kaczer, Ben ; Schram, Tom ; Brems, S ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETsPräsentation Presentation2022
5Illarionov, Yury ; Knobloch, Theresia ; Uzlu, B. ; Sokolov, N. S. ; Lemme, Max C ; Grasser, Tibor Highly stable GFETs with 2nm crystalline CaF2 insulatorsPräsentation Presentation2022
6Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 InsulatorsKonferenzbeitrag Inproceedings2022
7Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor Inorganic Molecular Crystals for 2D ElectronicsArtikel Article 2022
8Knobloch, Theresia Enhancing the Reliability of 2D Nanoelectronics Guided by Physical ModelingPräsentation Presentation2022
9Knobloch Theresia - 2022 - On the electrical stability of 2D material-based...pdf.jpgKnobloch, Theresia On the electrical stability of 2D material-based field-effect transistorsThesis Hochschulschrift 2022
10Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
11Ducry, Fabian ; Waldhoer, Dominic ; Knobloch, Theresia ; Csontos, Miklos ; Jimenez Olalla, Nadia ; Leuthold, Juerg ; Grasser, Tibor ; Luisier, Mathieu An Ab Initio Study on Resistance Switching in Hexagonal Boron NitrideArtikel Article 2022
12Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor Challenges for Nanoscale CMOS Logic Based on Two-Dimensional MaterialsArtikel Article 2022
13Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor Finding Suitable Gate Insulators for Reliable 2D FETsKonferenzbeitrag Inproceedings2022
14Illarionov, Y.Y. ; Knobloch, T. ; Grasser, T. Crystalline Insulators for Scalable 2D NanoelectronicsArtikel Article 2021
15Michl, Jakob ; Grill, Alexander ; Waldhör, Dominic ; Schleich, Christian ; Knobloch, Theresia ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, Ben ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, I ; Grasser, Tibor ; Waltl, Michael Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSKonferenzbeitrag Inproceedings 2021
16Wen, Chao ; Illarionov, Yury ; Frammelsberger, Werner ; Knobloch, Theresia ; Grasser, Tibor ; Lanza, Mario Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric FilmsKonferenzbeitrag Inproceedings2021
17Illarionov, Yury ; Banshchikov, A. G. ; Sokolov, N. S. ; Fedorov, V. V. ; Suturin, S. M. ; Vexler, M. I. ; Knobloch, Theresia ; Polyushkin, Dmitry K. ; Mueller, T. ; Grasser, Tibor Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D MaterialsPräsentation Presentation2021
18Knobloch, Theresia ; Illarionov, Yury Yu. ; Ducry, Fabian ; Schleich, Christian ; Wachter, Stefan ; Watanabe, Kenji ; Taniguchi, Takashi ; Mueller, Thomas ; Waltl, Michael ; Lanza, Mario ; Vexler, Mikhail I. ; Luisier, Mathieu ; Grasser, Tibor The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional MaterialsArtikel Article 2021
19Das, S. ; Sebastian, Amritanand ; Pop, Eric ; McClellan, Connor J. ; Franklin, Aaron D. ; Grasser, Tibor ; Knobloch, Theresia ; Illarionov, Yury ; Penumatcha, Ashish V. ; Appenzeller, J ; Chen, Zhihong ; Zhu, Wenjuan ; Asselbberghs, Inge ; Li, Lain-Jong ; Avci, Uygar E. ; Bhat, Navakanta ; Anthopoulos, Thomas D. ; Singh, Rajendra Transistors based on two-dimensional materials for future integrated circuitsArtikel Article 2021
20Michl, J. ; Grill, Alexander ; Stampfer, B. ; Waldhoer, D. ; Schleich, Christian ; Knobloch, T. ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, B. ; Parvais, B. ; Govoreanu, Bogdan ; Radu, I. ; Grasser, T. ; Waltl, M. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSInproceedings Konferenzbeitrag2021