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Reisinger, H.
 

Own Publications Eigene Publikationen

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PreviewAuthor(s)TitleTypeIssue Date
1Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja Anna ; Stampfer, Bernhard ; Reisinger, H. ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsBuchbeitrag Book Contribution 2022
2Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
3Feil, Maximilian ; Huerner, Andreas ; Puschkarsky, Katja ; Schleich, Christian ; Eichinger, Thomas ; Gustin, W. ; Reisinger, H. ; Grasser, Tibor The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device ParametersArtikel Article 2020
4Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
5Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement TechniquesArtikel Article 2019
6Puschkarsky, Katja ; Reisinger, H. ; Rott, Gunnar Andreas ; Schluender, C ; Gustin, W. ; Grasser, Tibor An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy MapsArtikel Article 2019
7Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingArtikel Article 2019
8Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS TransistorsKonferenzbeitrag Inproceedings 2018
9Puschkarsky, Katja ; Reisinger, H. ; Schlünder, C. ; Gustin, W. ; Grasser, Tibor Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTIKonferenzbeitrag Inproceedings 2018
10Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2018
11Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017
12Ullmann, B. ; Jech, M. ; Tyaginov, S. ; Waltl, M. ; Illarionov, Y. ; Grill, A. ; Puschkarsky, K. ; Reisinger, H. ; Grasser, T. The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defectsKonferenzbeitrag Inproceedings2017
13Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI StressKonferenzbeitrag Inproceedings2017
14Grasser, T. ; Waltl, M. ; Rzepa, G. ; Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Shluger, A. L. ; Reisinger, H. ; Kaczer, B. The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealingKonferenzbeitrag Inproceedings2016
15Giering, K.-U. ; Rott, G. ; Rzepa, G. ; Reisinger, H. ; Puppala, A.K. ; Reich, T. ; Gustin, W. ; Grasser, T. ; Jancke, R. Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact modelKonferenzbeitrag Inproceedings2016
16Grasser, T. ; Waltl, M. ; Wimmer, Y. ; Goes, W. ; Kosik, R. ; Rzepa, G. ; Reisinger, H. ; Pobegen, G. ; El-Sayed, A. ; Shluger, A. ; Kaczer, B. Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimesKonferenzbeitrag Inproceedings 2015
17Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Franco, J. ; Kaczer, Ben A unified perspective of RTN and BTIKonferenzbeitrag Inproceedings2014
18Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Gös, Wolfgang Evidence for Defect Pairs in SiON pMOSFETsKonferenzbeitrag Inproceedings2014
19Waltl, Michael ; Gös, Wolfgang ; Rott, K. ; Reisinger, H. ; Grasser, Tibor A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS CaseKonferenzbeitrag Inproceedings2014
20Illarionov, Yury ; Bina, Markus ; Tyaginov, S. E. ; Rott, K. ; Reisinger, H. ; Kaczer, Ben ; Grasser, Tibor A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014