|
| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Fleury, Clément ; Simbürger, Werner ; Pogany, Dionyz | Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors | Artikel Article  | 2019 |
| 2 | | Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz | Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors | Präsentation Presentation | 2019 |
| 3 | | Simbürger, Werner ; Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Willemen, Joost ; Vendt, V ; Schwingshackl, T ; D´Arbonneau, A | ESD Protection Devices and Technologies: Recent Advances and Trends | Präsentation Presentation | 2016 |
| 4 | | Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Simbürger, Werner | Transient interferometric mapping technique (TIM): an effective tools to understand ESD and device breakdown | Präsentation Presentation | 2015 |
| 5 | | Rigato, Matteo ; Fleury, Clément ; Heer, Michael ; Capriotti, Mattia ; Simbürger, Werner ; Pogany, Dionyz | ESD characterization of mulit-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique | Artikel Article | 2015 |
| 6 | | Rigato, Matteo ; Fleury, Clement ; Heer, Michael ; Simbürger, Werner ; Pogany, Dionyz | ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique | Präsentation Presentation | 2015 |
| 7 | | Fleury, Clement ; Rigato, Matteo ; Simbürger, Werner ; Pogany, Dionyz | Transient Interferometric Mapping of SiGe-base RF BJTs in 0,35 μm B7HFV technology under ESD stress | Präsentation Presentation | 2014 |
| 8 | | Rigato, Matteo ; Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz | ESD characterization of RF-NMOS transistors in 0.13 μm CMOS technology with transient interferometric mapping | Präsentation Presentation | 2014 |
| 9 | | Trotta, Saverio ; Dehlink, Bernhard ; Knapp, H. ; Aufinger, K. ; Meister, T.F. ; Böck, J. ; Simbürger, Werner ; Scholtz, Arpad Ludwig | SiGe Circuits for Spread Spectrum Automotive Radar | Konferenzbeitrag Inproceedings | 2007 |
| 10 | | Trotta, Saverio ; Knapp, H. ; Aufinger, K. ; Meister, T.F. ; Böck, J. ; Simbürger, Werner ; Scholtz, Arpad Ludwig | A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology | Konferenzbeitrag Inproceedings | 2007 |
| 11 | | Trotta, Saverio ; Knapp, H. ; Dibra, Donald ; Aufinger, K. ; Meister, T.F. ; Böck, J. ; Simbürger, Werner ; Scholtz, Arpad Ludwig | A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar | Konferenzbeitrag Inproceedings | 2007 |
| 12 | | Trotta, Saverio ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Bock, Josef ; Dehlink, Bernhard ; Simburger, Werner ; Scholtz, Arpad Ludwig | An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology | Artikel Article | 2007 |
| 13 | | Trotta, Saverio ; Knapp, H. ; Aufinger, K. ; Meister, T.F. ; Böck, J. ; Simbürger, Werner ; Scholtz, Arpad Ludwig | An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology | Konferenzbeitrag Inproceedings | 2006 |
| 14 | | Trotta, Saverio ; Knapp, H. ; Meister, T.F. ; Aufinger, K. ; Böck, J. ; Dehlink, Bernhard ; Simbürger, Werner ; Scholtz, Arpad Ludwig | A New Regenarative Divider by Four up to 160 GHz in SiGe Bipolar Technology | Konferenzbeitrag Inproceedings | 2006 |
| 15 | | Trotta, Saverio ; Knapp, H. ; Meister, T.F. ; Aufinger, K. ; Böck, J. ; Simbürger, Werner ; Scholtz, Arpad Ludwig | 110-GHz static frequency divider in SiGe bipolar technology | Konferenzbeitrag Inproceedings | 2005 |
| 16 | | Simbürger, Werner ; Aufinger, K. ; Böck, J. ; Boguth, S. ; Kehrer, Daniel ; Kienmayer, Christoph ; Knapp, H. ; Meister, T.F. ; Perndl, Werner ; Rest, M. ; Sandner, C. ; Schäfer, H. ; Schreiter, R. ; Stengl, R. ; Thüringer, R. ; Tiebout, Marc ; Wohlmuth, H.D. ; Wurzer, M. ; Scholtz, Arpad Ludwig | Silicon-based RF ICs up to 100GHz: Research Trends and Applications | Konferenzbeitrag Inproceedings | 2004 |
