Record link: 
http://hdl.handle.net/20.500.12708/143369
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Title: 
Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors
en
Citation: 
Fleury, C., Simbürger, W., & Pogany, D. (2019). Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors. Microelectronics Reliability, 100–101(113331). https://doi.org/10.1016/j.microrel.2019.06.023
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Publisher DOI: 
10.1016/j.microrel.2019.06.023
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Fleury, Clément 
Simbürger, Werner 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Journal: 
Microelectronics Reliability 
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ISSN: 
0026-2714
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Date (published): 
2019
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Number of Pages: 
6
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Publisher: 
PERGAMON-ELSEVIER SCIENCE LTD
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Condensed Matter Physics; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Safety, Risk, Reliability and Quality; Surfaces, Coatings and Films
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Research Areas: 
Surfaces and Interfaces: 50%
Materials Characterization: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
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