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Full name Familienname, Vorname
Würfl, Joachim
 

Own Publications Eigene Publikationen

Results 1-16 of 16 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Capriotti, M ; Bahat Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Ostermaier, Clemens ; Rigato, Matteo ; Lancaster, Suzanne ; Brunner, Frank ; Detz, Hermann ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistorsArtikel Article Nov-2016
2Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Vertical breakdown in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2015
3Capriotti, M ; Bahat-Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Brunner, Frank ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried High performances normally-off AlGaN/GaN True-MOS with sub-micrometric gate featuresPräsentation Presentation2015
4Fleury, Clément ; Capriotti, Mattia ; Rigato, Matteo ; Hilt, Oliver ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, Stephan ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article 2015
5Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
6Kuzmík, J. ; Ťapajna, Milan ; Válik, Lukas ; Molnar, Marian ; Donoval, D ; Fleury, Clement ; Pogany, Dionyz ; Strasser, Gottfried ; Hilt, O ; Brunner, Frank ; Würfl, Joachim Self-Heating in GaN Transistors Designed for High-Power OperationArtikel Article Oct-2014
7Fleury, Clement ; Capriotti, M ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Temperature extraction in Normally-Off AlGaN/GaN HEMTs using Transient Interferometric Mapping0Präsentation Presentation2014
8Fleury, Clement ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Zhytnytska, Rimma ; Würfl, Joachim ; Derluyn, Joff ; Visalli, Domenica ; Strasser, Gottfried ; Pogany, Dionyz Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si SubstratesKonferenzbeitrag Inproceedings2013
9Fleury, Clement ; Bychikhin, Sergey ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Transient Thermal Mapping Of P-Gan Gate Normally-Off Algan/gan TransistorsKonferenzbeitrag Inproceedings2013
10Fleury, Clément ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, Oliver ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article2013
11Fleury, Clement ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2013
12Marko, Paul ; Alexewicz, Alexander ; Hilt, O ; Meneghesso, Gaudenzio ; Würfl, Joachim ; Zanoni, Enrico ; Strasser, Gottfried ; Pogany, Dionyz Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2012
13Marko, Paul ; Alexewicz, Alexander ; Meneghini, M ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTsPräsentation Presentation2012
14Bychikhin, Sergey ; Dubec, Victor ; Kuzmik, Jan ; Würfl, Joachim ; Kurpas, Paul ; Teyssier, Jean-Pierre ; Pogany, Dionyz Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping MethodKonferenzbeitrag Inproceedings2007
15Pogany, Dionyz ; Kuzmik, Jan ; Bychikhin, Sergey ; Pichonat, Emmanuelle ; Gaquière, Christophe ; Andersson, Kristoffer ; Fager, Christian ; Teyssier, Jean-Pierre ; Würfl, Joachim ; di Forte Poisson, Marie-Antoinette Thermal Characterization of HF power FETsKonferenzbeitrag Inproceedings2006
16Quay, Rüdiger ; Würfl, Joachim ; Wiegner, Dirk ; Fischer, Georg ; Schuberth, Christian ; Magerl, Gottfried GaN/AlGaN HEMTs for Highly Linear Communication Applications in L-Frequency bandKonferenzbeitrag Inproceedings2005