Name Card

Full name Familienname, Vorname
Vexler, M.I.
 

Own Publications Eigene Publikationen

Results 1-11 of 11 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 InsulatorsKonferenzbeitrag Inproceedings2022
2Illarionov, Yury ; Banshchikov, A. G. ; Vexler, M.I. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Thesberg, Michael ; Sokolov, N. S. ; Mueller, T. ; Grasser, Tibor Epitaxial CaF2: a Route towards Scalable 2D ElectronicsKonferenzbeitrag Inproceedings2019
3Illarionov, Yury ; Banshchikov, A. G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Vexler, M.I. ; Sokolov, N. S. ; Müller, Thomas ; Grasser, Tibor CaF2 Insulators for Ultrascaled 2D Field Effect TransistorsPräsentation Presentation2019
4Illarionov, Yury ; Vexler, M.I. ; Fedorov, V. V. ; Suturin, S. M. ; Sokolov, N. S. ; Grasser, Tibor Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon MicroelectronicsKonferenzbeitrag Inproceedings 2015
5Illarionov, Yu.Yu. ; Vexler, M.I. ; Karner, M. ; Tyaginov, S.E. ; Cervenka, J. ; Grasser, T. TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS StructuresArtikel Article 2015
6Vexler, M.I. ; Illarionov, Yury ; Tyaginov, S. E. ; Sokolov, N. S. ; Fedorov, V. V. ; Grasser, Tibor Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NTKonferenzbeitrag Inproceedings 2014
7Illarionov, Yu.Yu. ; Vexler, M.I. ; Fedorov, V.V. ; Suturin, S.M. ; Sokolov, N.S. Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride LayerArtikel Article2013
8Kareva, G.G. ; Vexler, M.I. ; Illarionov, Yu.Yu. Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling DiodeArtikel Article2013
9Tyaginov, S.E. ; Vexler, M.I. ; El Hdiy, A. ; Gacem, K. ; Zaporojtchenko, V. Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel StructuresArtikel Article2010
10Tyaginov, S. E. ; Vexler, M.I. ; El Hdiy, A. ; Gacem, K. ; Zaporojtchenko, V. Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel StructuresKonferenzbeitrag Inproceedings2008
11Yoder, P.D. ; Vexler, M.I. ; Shulekin, A.F. ; Asli, Nouri ; Gastev, S. V. ; Grekhov, I.V. ; Seegebrecht, P. ; Tyaginov, Stanislav ; Zimmermann, Horst Luminescence spectra of an Al/SiO₂/p-Si tunnel metal-oxide-semiconductor structureArtikel Article 2005