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Aichinger, T.
 

Own Publications Eigene Publikationen

Results 1-20 of 24 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Berens, J. ; Weger, M. ; Pobegen, G. ; Aichinger, T. ; Rescher, G. ; Schleich, C. ; Grasser, T. Similarities and Differences of BTI in SiC and Si Power MOSFETsKonferenzbeitrag Inproceedings 2020
2Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
3Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2018
4Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017
5Aichinger, T. ; Lenahan, P. M. ; Grasser, Tibor ; Pobegen, G. ; Nelhiebel, M. Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR StudyKonferenzbeitrag Inproceedings2012
6Grasser, Tibor ; Aichinger, T. ; Pobegen, G. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Franco, J. ; Nelhiebel, M. ; Kaczer, Ben The 'Permanent' Component of NBTI: Composition and AnnealingKonferenzbeitrag Inproceedings2011
7Pobegen, G. ; Aichinger, T. ; Grasser, Tibor ; Nelhiebel, M. Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETsKonferenzbeitrag Inproceedings2011
8Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Reisinger, H. ; Aichinger, T. ; Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Schanovsky, Franz ; Franco, J. ; Toledano-Luque, M. ; Nelhiebel, M. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsArtikel Article 2011
9Bina, Markus ; Aichinger, T. ; Pobegen, G. ; Gös, Wolfgang ; Grasser, Tibor Modeling of DCIV Recombination Currents Using A Multistate Multiphonon ModelKonferenzbeitrag Inproceedings2011
10Pobegen, G. ; Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Dependence of the Negative Bias Temperature Instability on the Gate Oxide ThicknessKonferenzbeitrag Inproceedings2010
11Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to HydrogenArtikel Article2010
12Aichinger, T. ; Nelhiebel, M. ; Einspieler, S. ; Grasser, Tibor In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on ChipArtikel Article2010
13Aichinger, T. ; Nelhiebel, M. ; Einspieler, S. ; Grasser, Tibor Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature StressArtikel Article2010
14Aichinger, T. ; Puchner, S. ; Nelhiebel, M. ; Grasser, Tibor ; Hutter, H. Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature StressKonferenzbeitrag Inproceedings2010
15Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature ChangesKonferenzbeitrag Inproceedings2009
16Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor On the Temperature Dependence of NBTI RecoveryKonferenzbeitrag Inproceedings2009
17Wagner, Paul-Jürgen ; Aichinger, T. ; Grasser, Tibor ; Nelhiebel, M. ; Vandamme, L.K.J. Possible Correlation between Flicker Noise and Bias Temperature StressKonferenzbeitrag Inproceedings2009
18Hehenberger, Philipp Paul ; Aichinger, T. ; Grasser, Tibor ; Gös, Wolfgang ; Triebl, Oliver ; Kaczer, Ben ; Nelhiebel, M. Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement TechniqueKonferenzbeitrag Inproceedings2009
19Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Aichinger, T. ; Hehenberger, Philipp Paul ; Nelhiebel, M. A Two-Stage Model for Negative Bias Temperature InstabilityKonferenzbeitrag Inproceedings2009
20Aichinger, T. ; Nelhiebel, M. ; Grasser, Tibor A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTIArtikel Article2009