Name Card

Full name Familienname, Vorname
Fleury, Clement
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 40 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Ritter, Hans-Martin ; Krainer, Rudolf ; Kumar, V. ; Notermans, Guido ; Pogany, Dionyz Triggering of multi-finger and multi-segment SCRs near the holding voltage studied by emission microscopy under DC conditionsPräsentation Presentation2021
2Lambert, N. ; Taylor, A. ; Hubík, P. ; Bulíř, J. ; More-Chevalier, J. ; Karaca, H. ; Fleury, C. ; Voves, J. ; Šobáň, Z. ; Pogany, D. ; Mortet, V. Modeling current transport in boron-doped diamond at high electric fields including self-heating effectArtikel Article 2020
3Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Kumar, Vasantha ; Ritter, Hans-Martin ; Notermans, Guido ; Pogany, Dionyz Simultaneous and Sequential Triggering in Multi-Finger Floating-Base SCRs Depending on TLP Pulse Rise TimeArtikel Article 2020
4Karaca, Hasan ; Fleury, Clement ; Holland, Steffen ; Ritter, H.-M. ; Notermans, Guido ; Pogany, Dionyz Mechanism of sequential finger triggering of multi-finger floating-base SCRs due to inherent substrate currentsKonferenzbeitrag Inproceedings2019
5Lambert, N ; Taylor, A. ; Hubik, P ; Bulir, J ; More-Chevalier, J ; Karaca, Hasan ; Fleury, Clement ; Pogany, Dionyz ; Mortet, V Modelling I-V characteristics of boron-doped diamond at high electric field including self-heating effectPräsentation Presentation2019
6Fleury, Clement ; Simbürger, Werner ; Pogany, Dionyz Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistorsPräsentation Presentation2019
7Taylor, A. ; Lambert, N ; Hubik, P ; Bulir, J ; Moris-Chevalier, J ; Karaca, Hasan ; Fleury, Clement ; Voves, J ; Soban, Z ; Pogany, Dionyz ; Mortet, V Experimental and modelled I-V characteristics of boron-doped diamond at high electric fields including self-heating effectPräsentation Presentation2019
8Fleury, Clément ; Simbürger, Werner ; Pogany, Dionyz Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistorsArtikel Article 2019
9Rigato, Matteo ; Fleury, Clement ; Schwarz, Benedikt ; Mergens, Markus ; Bychikhin, Sergey ; Simburger, Werner ; Pogany, Dionyz Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk TechnologyArtikel Article 2018
10Fleury, Clement ; Notermans, Guido ; Ritter, H.-M. ; Pogany, Dionyz TIM, EMMI and 3D TCAD analysis of discrete-technology SCRsPräsentation Presentation2017
11Fleury, C. ; Notermans, G. ; Ritter, H.-M. ; Pogany, D. TIM, EMMI and 3D TCAD analysis of discrete-technology SCRsArtikel Article 2017
12Kuzmik, J. ; Fleury, C. ; Adikimenakis, A. ; Gregušová, D. ; Ťapajna, M. ; Dobročka, E. ; Haščík, Š. ; Kučera, M. ; Kúdela, R. ; Androulidaki, M. ; Pogany, D. ; Georgakilas, A. Current conduction mechanism and electrical break-down in InN grown on GaNArtikel Article 2017
13Capriotti, M ; Bahat Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Ostermaier, Clemens ; Rigato, Matteo ; Lancaster, Suzanne ; Brunner, Frank ; Detz, Hermann ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistorsArtikel Article Nov-2016
14Simbürger, Werner ; Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Willemen, Joost ; Vendt, V ; Schwingshackl, T ; D´Arbonneau, A ESD Protection Devices and Technologies: Recent Advances and TrendsPräsentation Presentation2016
15Meneghini, M. ; Hilt, O. ; Fleury, C. ; Silvestri, R. ; Capriotti, M. ; Strasser, G. ; Pogany, D. ; Bahat-Treidel, E. ; Brunner, F. ; Knauer, A. ; Würfl, J. ; Rossetto, I. ; Zanoni, E. ; Meneghesso, G. ; Dalcanale, S. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failureArtikel Article 2016
16Rigato, Matteo ; Fleury, Clement ; Pogany, Dionyz ; Simbürger, Werner Transient interferometric mapping technique (TIM): an effective tools to understand ESD and device breakdownPräsentation Presentation2015
17Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Vertical breakdown in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2015
18Capriotti, M ; Fleury, Clement ; Bethge, Ole ; Rigato, Matteo ; Lancaster, Suzanne ; Pogany, Dionyz ; Strasser, Gottfried E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate InsulatorKonferenzbeitrag Inproceedings2015
19Capriotti, M ; Bahat-Treidel, E. ; Fleury, Clement ; Bethge, Ole ; Brunner, Frank ; Hilt, O ; Würfl, Joachim ; Pogany, Dionyz ; Strasser, Gottfried High performances normally-off AlGaN/GaN True-MOS with sub-micrometric gate featuresPräsentation Presentation2015
20Capriotti, M ; Fleury, Clement ; Ostermaier, C ; Strasser, Gottfried ; Pogany, Dionyz Interaction Between the Instrinsic Frequency Response of the III-N Barrier Layer and Interface States in III-N MIS-HEMTs in Spill-Over RegimeKonferenzbeitrag Inproceedings2015