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Record link: 
http://hdl.handle.net/20.500.12708/74648
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Title: 
E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate Insulator
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Citation: 
Capriotti, M., Fleury, C., Bethge, O., Rigato, M., Lancaster, S., Pogany, D., & Strasser, G. (2015). E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate Insulator. In Proceedings of the ESSDERC (pp. 60–63). http://hdl.handle.net/20.500.12708/74648
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Capriotti, M 
Fleury, Clement 
Bethge, Ole 
Rigato, Matteo 
Lancaster, Suzanne 
Pogany, Dionyz 
Strasser, Gottfried 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Published in: 
Proceedings of the ESSDERC 
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Date (published): 
2015
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Event name: 
European Solid-State Device Research Conference (ESSDERC) 
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Event date: 
16-Sep-1991 - 19-Sep-1991
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Event place: 
Montreux, Austria
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Number of Pages: 
4
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
Conference Paper

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