European Solid-State Device Research Conference (ESSDERC)

Event name
European Solid-State Device Research Conference (ESSDERC)
 
Event type
Event for scientific audience
 
Start date
16-09-1991
End date
19-09-1991
 
Location
Montreux
Country
Austria
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-20 of 45 (Search time: 0.004 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Müller, Thomas 2D materials optoelectronicsKonferenzbeitrag Inproceedings2016
2Khalil, N. ; Nanz, Gerd ; Rios, R. ; Selberherr, Siegfried A B-Splines Regression Technique to Determine One-Dimensional MOS Doping ProfilesKonferenzbeitrag Inproceedings1995
3Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Kaczer, Ben ; Makarov, Alexander ; Vexler, Mikhail I. ; Grasser, Tibor A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETsKonferenzbeitrag Inproceedings 2016
4Fasching, F. ; Fischer, C. ; Halama, S. ; Pimingstorfer, H. ; Read, H. ; Selberherr, S. ; Stippel, H. ; Tuppa, W. ; Verhas, P. ; Wimmer, K. A new open technology CAD systemKonferenzbeitrag Inproceedings1991
5Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based MemoryKonferenzbeitrag Inproceedings2010
6Heinreichsberger, Otto ; Habaš, Predrag ; Selberherr, Siegfried Analysis of geometric charge-pumping components in a thin-film SOI deviceKonferenzbeitrag Inproceedings1992
7Kuzmik, Jan ; Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Alam, A ; Dikme, Y ; Heuken, M ; Javorka, P ; Marso, M ; Kordos, P Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substratesKonferenzbeitrag Inproceedings2003
8Sverdlov, Viktor ; El-Sayed, Al-Moatasem ; Kosina, Hans ; Selberherr, Siegfried Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge StatesKonferenzbeitrag Inproceedings 2021
9Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Reisinger, H. ; Grasser, Tibor Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and RelaxationKonferenzbeitrag Inproceedings2009
10Capriotti, M ; Fleury, Clement ; Bethge, Ole ; Rigato, Matteo ; Lancaster, Suzanne ; Pogany, Dionyz ; Strasser, Gottfried E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate InsulatorKonferenzbeitrag Inproceedings2015
11Sverdlov, Viktor ; Ungersböck, Stephan Enzo ; Kosina, Hans ; Selberherr, Siegfried Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p TheoryKonferenzbeitrag Inproceedings2007
12Trommer, Jens ; Simon, Maik ; Slesazeck, Stefan ; Weber, Walter M. ; Mikolajick, Thomas Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent InputsKonferenzbeitrag Inproceedings2019
13Gerrer, Louis ; Hussin, Razaidi ; Amoroso, Salvatore M. ; Franco, J. ; Weckx, P. ; Simicic, M. ; Horiguchi, N. ; Kaczer, Ben ; Grasser, T. ; Asenov, Asen Experimental evidences and simulations of trap generation along a percolation pathKonferenzbeitrag Inproceedings2015
14Puschkarsky, Katja ; Reisinger, H. ; Schlünder, C. ; Gustin, W. ; Grasser, Tibor Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTIKonferenzbeitrag Inproceedings 2018
15Kostov, Plamen ; Gaberl, Wolfgang ; Zimmermann, Horst High-speed PNP PIN Phototransistors in a 0.18 μ CMOS ProcessKonferenzbeitrag Inproceedings 2011
16Vitanov, Stanislav ; Palankovski, Vassil ; Selberherr, Siegfried Hydrodynamic Models for GaN-Based HEMTsKonferenzbeitrag Inproceedings2010
17Henkel, Christoph ; Hellström, Per-Erik ; Östling, Mikael ; Bethge, Ole ; Stöger-Pollach, Michael ; Bertagnolli, Emmerich Impact of Oxidation and Reduction Annealing on the Electrical Properties of Ge/La2O3/ZrO2 Gate StacksKonferenzbeitrag Inproceedings2011
18Tyaginov, S. E. ; Starkov, Ivan ; Jungemann, C. ; Enichlmair, H. ; Park, Jong Mun ; Grasser, Tibor Impact of the Carrier Distribution Function on Hot-Carrier Degradation ModelingKonferenzbeitrag Inproceedings2011
19Pourfath, Mahdi ; Kosina, Hans ; Cheong, Byoung-Ho ; Park, W.J. ; Selberherr, Siegfried Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect TransistorsKonferenzbeitrag Inproceedings 2005
20Illarionov, Yury ; Waltl, Michael ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Lemme, Max ; Grasser, Tibor Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015