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Ostling, M.
 

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PreviewAuthor(s)TitleTypeIssue Date
1Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M.C. ; Grasser, Tibor Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015
2Illarionov, Yu. Yu. ; Waltl, M. ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Mueller, T. ; Lemme, M.C. ; Grasser, T. Hot-carrier degradation in single-layer double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015
3Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M.C. ; Grasser, Tibor Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect TransistorsKonferenzbeitrag Inproceedings2015
4Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M ; Grasser, Tibor Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect TransistorsKonferenzbeitrag Inproceedings 2015
5Illarionov, Yury ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Müller, Thomas ; Lemme, M.C. ; Grasser, Tibor Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability ChallengeKonferenzbeitrag Inproceedings 2014
6Illarionov, Yu. Yu. ; Smith, A. D. ; Vaziri, S. ; Ostling, M. ; Mueller, T. ; Lemme, M. C. ; Grasser, T. Bias-Temperature Instability in Single-Layer Graphene Field-Effect TransistorsArtikel Article2014