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Record link: 
http://hdl.handle.net/20.500.12708/156983
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Title: 
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors
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Citation: 
Illarionov, Yu. Yu., Smith, A. D., Vaziri, S., Ostling, M., Mueller, T., Lemme, M. C., & Grasser, T. (2014). Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors. Applied Physics Letters, 105(14), 143507. https://doi.org/10.1063/1.4897344
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Publisher DOI: 
10.1063/1.4897344
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Publication Type: 
Article - Original Research Article
en
Authors: 
Illarionov, Yu. Yu. 
Smith, A. D. 
Vaziri, S. 
Ostling, M. 
Mueller, T. 
Lemme, M. C. 
Grasser, T. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E387-01 - Forschungsbereich Photonik 
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Journal: 
Applied Physics Letters 
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ISSN: 
0003-6951
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Date (published): 
2014
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Number of Pages: 
5
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Peer reviewed: 
Yes
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Keywords: 
Physics and Astronomy (miscellaneous)
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Research Areas: 
Modelling and Simulation: 50%
Computational Materials Science: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
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