Name Card

Full name Familienname, Vorname
Reiner, Maria
 

Own Publications Eigene Publikationen

Results 1-9 of 9 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, G. ; Pogany, Dionyz ; Prechtl, G. ; Detzel, T. ; Häberlen, O. The role of defects on reliability aspects in GaN power devicesPräsentation Presentation2019
2Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
3Reiner, Maria ; Schellander, J. ; Denifl, Günter ; Stadtmueller, M. ; Schmid, Michael ; Frischmuth, Tobias ; Schmid, Ulrich ; Pietschnig, Rudolf ; Ostermaier, Clemens Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlₓGa₁₋ₓN surface donor modification by fluorinationArtikel Article 2017
4Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz Review of bias-temperature instabilities at the III-N/dielectric interfacePräsentation Presentation2017
5Lagger, Peter Willibald ; Donsa, Stefan ; Spreitzer, P. ; Pobegen, G. ; Reiner, Maria ; Naharashi, H. ; Mohamed, J. ; Mösslacher, M. ; Prechtl, G. ; Pogany, Dionyz ; Ostermaier, C Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heatersKonferenzbeitrag Inproceedings2015
6Reiner, Maria ; Lagger, Peter Willibald ; Prechtl, G. ; Steinschifter, Patrick ; Pietschnig, R ; Pogany, Dionyz ; Ostermaier, Clemens Modification of "Native" Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect EngineeringKonferenzbeitrag Inproceedings2015
7Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, Gregor ; Pogany, Dionyz Is PBTI at the dielectric/III‐N interface limited by interface traps?Präsentation Presentation2014
8Lagger, Peter Willibald ; Reiner, Maria ; Denifl, G ; Stadtmüller, Michael ; Pogany, Dionyz ; Ostermaier, C Understanding the Fundamental Limitations for the Improvement of Forward Gate Bias induced Vth Drift Stability of GaN based MIS-HEMTsPräsentation Presentation2014
9Lagger, Peter ; Reiner, Maria ; Pogany, Dionyz ; Ostermaier, Clemens Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery ExperimentsArtikel Article 2014