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Full name Familienname, Vorname
Puschkarsky, K.
 

Own Publications Eigene Publikationen

Results 1-5 of 5 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
2Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
3Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement TechniquesArtikel Article 2019
4Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingArtikel Article 2019
5Ullmann, B. ; Jech, M. ; Tyaginov, S. ; Waltl, M. ; Illarionov, Y. ; Grill, A. ; Puschkarsky, K. ; Reisinger, H. ; Grasser, T. The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defectsKonferenzbeitrag Inproceedings2017