Name Card

Full name Familienname, Vorname
Arimura, H
 

Own Publications Eigene Publikationen

Results 1-4 of 4 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Marneffe, J.-F. ; Vandooren, Anne ; Kimura, Y ; Nyns, L ; Wu, Zhicheng ; El-Sayed, Al-Moatasem ; Jech, Markus ; Waldhör, Dominic ; Claes, Dieter ; Arimura, H ; Ragnarsson, L. A. ; Afanas´Ev, V. ; Horiguchi, N. ; Linten, D ; Grasser, Tibor ; Kaczer, Ben Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO<sub>2</sub> with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier StackingKonferenzbeitrag Inproceedings 2021
2Franco, J. ; Marneffe, J.-F. ; Vandooren, Anne ; Arimura, H ; Ragnarsson, L. A. ; Claes, Dieter ; Litta, Eugenio Dentoni ; Horiguchi, N. ; Croes, Kristof ; Linten, D ; Grasser, Tibor ; Kaczer, Ben Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core LogicKonferenzbeitrag Inproceedings 2021
3Tyaginov, Stanislav ; El-Sayed, Al-Moatasem Bellah ; Makarov, Alexander ; Chasin, A ; Arimura, H ; Vandemaele, Michiel ; Jech, Markus ; Capogreco, Elena ; Witters, L. ; Grill, Alexander ; De Keersgieter, An ; Eneman, G. ; Linten, Dimitri ; Kaczer, Ben Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETsKonferenzbeitrag Inproceedings 2019
4Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI StressKonferenzbeitrag Inproceedings2017