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Record link: 
http://hdl.handle.net/20.500.12708/77694
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Title: 
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO<sub>2</sub> with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
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Citation: 
Franco, J., Marneffe, J.-F., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L. A., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., & Kaczer, B. (2021). Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking. In 2020 IEEE International Electron Devices Meeting (IEDM). 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States of America (the). https://doi.org/10.1109/iedm13553.2020.9372054
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Publisher DOI: 
10.1109/iedm13553.2020.9372054
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Franco, J. 
Marneffe, J.-F. 
Vandooren, Anne 
Kimura, Y 
Nyns, L 
Wu, Zhicheng 
El-Sayed, Al-Moatasem 
Jech, Markus 
Waldhör, Dominic 
Claes, Dieter 
Arimura, H 
Ragnarsson, L. A. 
Afanas´Ev, V. 
Horiguchi, N. 
Linten, D 
Grasser, Tibor 
Kaczer, Ben 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
2020 IEEE International Electron Devices Meeting (IEDM) 
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Date (published): 
2021
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Event name: 
2020 IEEE International Electron Devices Meeting (IEDM) 
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Event date: 
12-Dec-2020 - 18-Dec-2020
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Event place: 
San Francisco, United States of America (the)
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Number of Pages: 
4
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Peer reviewed: 
Yes
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Research Areas: 
Modelling and Simulation: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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Appears in Collections:
Conference Paper

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