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Full name Familienname, Vorname
Puschkarsky, Katja
 

Own Publications Eigene Publikationen

Results 1-10 of 10 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Feil, Maximilian ; Huerner, Andreas ; Puschkarsky, Katja ; Schleich, Christian ; Eichinger, Thomas ; Gustin, W. ; Reisinger, H. ; Grasser, Tibor The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device ParametersArtikel Article 2020
2Puschkarsky, Katja ; Reisinger, H. ; Rott, Gunnar Andreas ; Schluender, C ; Gustin, W. ; Grasser, Tibor An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy MapsArtikel Article 2019
3Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
4Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS TransistorsKonferenzbeitrag Inproceedings 2018
5Puschkarsky, Katja ; Reisinger, H. ; Schlünder, C. ; Gustin, W. ; Grasser, Tibor Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTIKonferenzbeitrag Inproceedings 2018
6Puschkarsky, Katja ; Grasser, Tibor ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETsKonferenzbeitrag Inproceedings 2018
7Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor Understanding BTI in SiC MOSFETs and Its Impact on Circuit OperationArtikel Article 2018
8Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018
9Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017
10Grasser, Tibor ; Waltl, Michael ; Puschkarsky, Katja ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, G. ; Reisinger, H. ; Arimura, H ; Kaczer, Ben Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI StressKonferenzbeitrag Inproceedings2017