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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor | Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs | Artikel Article  | 2019 |
| 2 | | Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor | NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability | Artikel Article | 2019 |
| 3 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique | Artikel Article | 2018 |
| 4 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning | Artikel Article | 2018 |
| 5 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique | Artikel Article | 2017 |
| 6 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs | Konferenzbeitrag Inproceedings | 2016 |
| 7 | | Rescher, Gerald ; Pobegen, Gregor ; Grasser, Tibor | Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress | Artikel Article | 2016 |
