<div class="csl-bib-body">
<div class="csl-entry">Wind, L., Sistani, M., Böckle, R., Smoliner, J., Vukŭsić, L., Aberl, J., Brehm, M., Schweizer, P., Maeder, X., Michler, J., Fournel, F., Hartmann, J.-M., & Weber, W. M. (2022). Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts. <i>Small</i>, Article 2204178. https://doi.org/10.1002/smll.202204178</div>
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dc.identifier.issn
1613-6810
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/101852
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dc.description.abstract
Si1-x Gex is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si1-x Gex junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si1-x Gex heterostructures, obtained from a thermally induced exchange between ultra-thin Si1-x Gex nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si1-x Gex segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si1-x Gex into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si1-x Gex composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si1-x Gex junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.
en
dc.language.iso
en
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dc.publisher
Wiley
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dc.relation.ispartof
Small
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
aluminum
en
dc.subject
germanium
en
dc.subject
metal-semiconductor heterostructures
en
dc.subject
schottky barrier field-effect transistors
en
dc.subject
silicon
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dc.title
Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts
en
dc.type
Article
en
dc.type
Artikel
de
dc.rights.license
Creative Commons Namensnennung 4.0 International
de
dc.rights.license
Creative Commons Attribution 4.0 International
en
dc.identifier.pmid
36135726
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Swiss Federal Laboratories for Materials Science and Technology, Switzerland
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dc.contributor.affiliation
Swiss Federal Laboratories for Materials Science and Technology, Switzerland
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dc.contributor.affiliation
Swiss Federal Laboratories for Materials Science and Technology, Switzerland