Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

Sistani, Masiar; Böckle, Raphael; Bartmann, Maximilian G.; Lugstein, Alois; Weber, Walter M.

doi:10.1021/acsphotonics.1c01359

Record link:

http://hdl.handle.net/20.500.12708/138558

Title:

Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

Citation:

Sistani, M., Böckle, R., Bartmann, M. G., Lugstein, A., & Weber, W. M. (2021). Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime. ACS Photonics, 8(12), 3469–3475. https://doi.org/10.1021/acsphotonics.1c01359

Publisher DOI:

10.1021/acsphotonics.1c01359

Publication Type:

Article - Original Research Article

Language:

English

Authors:

Sistani, Masiar
Böckle, Raphael
Bartmann, Maximilian G.
Lugstein, Alois
Weber, Walter M.

Organisational Unit:

E362 - Institut für Festkörperelektronik
E362-01 - Forschungsbereich Optoelektronische Materialien

Journal:

ACS Photonics

ISSN:

2330-4022

Date (published):

2021

Number of Pages:

Publisher:

AMER CHEMICAL SOC

Peer reviewed:

Yes

Keywords:

Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Atomic and Molecular Physics, and Optics; Biotechnology

Research Areas:

Surfaces and Interfaces: 25%
Materials Characterization: 25%
Structure-Property Relationship: 50%

Science Branch:

Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie

Appears in Collections:

Article

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