<div class="csl-bib-body">
<div class="csl-entry">Rigato, M., Fleury, C., Schwarz, B., Mergens, M., Bychikhin, S., Simburger, W., & Pogany, D. (2018). Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology. <i>IEEE Transactions on Electron Devices</i>, <i>65</i>(3), 829–837. https://doi.org/10.1109/ted.2018.2789941</div>
</div>
-
dc.identifier.issn
0018-9383
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/144424
-
dc.relation.ispartof
IEEE Transactions on Electron Devices
-
dc.subject
Electrical and Electronic Engineering
-
dc.subject
Electronic, Optical and Magnetic Materials
-
dc.title
Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology
