Record link: 
http://hdl.handle.net/20.500.12708/144424
-
Title: 
Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology
-
Citation: 
Rigato, M., Fleury, C., Schwarz, B., Mergens, M., Bychikhin, S., Simburger, W., & Pogany, D. (2018). Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk Technology. IEEE Transactions on Electron Devices, 65(3), 829–837. https://doi.org/10.1109/ted.2018.2789941
-
Publisher DOI: 
10.1109/ted.2018.2789941
-
Publication Type: 
Artikel - Original Research Article
de
 
Article - Original Research Article
en
Authors: 
Rigato, Matteo 
Fleury, Clement 
Schwarz, Benedikt 
Mergens, Markus 
Bychikhin, Sergey 
Simburger, Werner 
Pogany, Dionyz 
-
Organisational Unit: 
E362 - Institut für Festkörperelektronik 
-
Journal: 
IEEE Transactions on Electron Devices 
-
ISSN: 
0018-9383
-
Date (published): 
2018
-
Number of Pages: 
9
-
Peer reviewed: 
Yes
-
Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
-
Research Areas: 
Surfaces and Interfaces: 50%
Materials Characterization: 50%
-
Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
-
Appears in Collections:
Article

Show full item record

Items in reposiTUm are protected by copyright, with all rights reserved, unless otherwise indicated.

Page view(s)

19
checked on May 17, 2023

Google ScholarTM

Check