Datensatz Zitierlink: 
http://hdl.handle.net/20.500.12708/149288
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Titel: 
Low power phase change memory switching of ultra-thin In₃Sb1Te₂ nanowires
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Zitat: 
Selmo, S., Cecchini, R., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., & Longo, M. (2016). Low power phase change memory switching of ultra-thin In₃Sb1Te₂ nanowires. Applied Physics Letters, 109(21), Article 213103. https://doi.org/10.1063/1.4968510
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Verlags-DOI: 
10.1063/1.4968510
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Publikationstyp: 
Artikel - Forschungsartikel
de
Sprache: 
Englisch
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Autor_innen: 
Selmo, Simone 
Cecchini, R. 
Cecchi, S. 
Wiemer, C. 
Fanciulli, M. 
Rotunno, E. 
Lazzarini, Laura 
Rigato, Matteo 
Pogany, Dionyz 
Lugstein, Alois 
Longo, M. 
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Organisations­einheit: 
E362 - Institut für Festkörperelektronik 
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Zeitschrift: 
Applied Physics Letters 
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ISSN: 
0003-6951
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Datum (veröffentlicht): 
2016
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Umfang: 
6
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Peer Reviewed: 
Ja
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Keywords: 
Electrical properties and parameters; Current-voltage characteristic; Electrical characterization; Amorphous materials; Resistive switching; Chemical vapor deposition; Nanoparticle; Nanowires; Chemical processes; Phase change memories
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Abstract: 
We report on the fabrication and electrical characterization of phase change memory (PCM) devices formed by In3Sb1Te2 chalcogenide nanowires (NWs), with diameters as small as 20 nm. The NWs were self-assembled by metal organic chemical vapor deposition via the vapor–liquid–solid method, catalyzed by Au nanoparticles. Reversible and well reproducible memory switching of the NWs between low and high resistance states was demonstrated. The conduction mechanism of the high resistance state was investigated according to a trap-limited model for electrical transport in the amorphous phase. The size of the amorphized portion of the NW and the critical electric field for the transition to the low resistance state were evaluated. The In3Sb1Te2 NW-based devices showed very low working parameters, such as RESET voltage (∼3 V), current (∼40 μA), and power (∼130 μW). Our results indicated that the studied NWs are suitable candidates for the realization of ultra-scaled, high performance PCM devices.
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Forschungs­schwerpunkte: 
Materials Characterization: 30%
Structure-Property Relationship: 70%
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Wissenschafts­zweig: 
Elektrotechnik, Elektronik, Informationstechnik
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