Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

Abstract

In this Letter we report on the exploration of axial metal/ semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor − liquid − solid grown Ge nanowire and Al contact pads due to the substantially different diff usion behavior of Ge in Al and vice versa. Temperature-dependent I V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the 111 ⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.