Kral, S., Zeiner, C., Stöger-Pollach, M., Bertagnolli, E., den Hertog, M. I., Lopez-Haro, M., Robin, E., El Hajraoui, K., & Lugstein, A. (2015). Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures. Nano Letters, 15(7), 4783–4787. https://doi.org/10.1021/acs.nanolett.5b01748
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie E362 - Institut für Festkörperelektronik
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Journal:
Nano Letters
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ISSN:
1530-6984
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Date (published):
2015
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Number of Pages:
5
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Publisher:
ACS Publications
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Peer reviewed:
Yes
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Keywords:
Mechanical Engineering; Condensed Matter Physics; General Materials Science; Bioengineering; General Chemistry; aluminum; germanium; Nanowire; impact ionization; Schottky contact; heterostructure
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Abstract:
In this Letter we report on the exploration of axial metal/
semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor − liquid − solid grown Ge nanowire and Al contact pads due to the substantially different diff
usion behavior of Ge in Al and vice versa. Temperature-dependent I
V measurements revealed the metallic properties of the crystalline Al
nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm2. Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the 111 ⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to
fabricate a novel impact ionization device.
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Research Areas:
Surfaces and Interfaces: 20% Materials Characterization: 20% Composite Materials: 60%
