Record link: 
http://hdl.handle.net/20.500.12708/153711
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Title: 
Crystal growth of CePt2Si2, CeRh2Ga2 and Ce2Au3In5 – candidates for nodal-line topological semimetals
en
Citation: 
Yan, X., Fischer, L., Eguchi, G., Svagera, R., Waas, M., Bühler-Paschen, S., & Prokofiev, A. (2022, July 25). Crystal growth of CePt2Si2, CeRh2Ga2 and Ce2Au3In5 – candidates for nodal-line topological semimetals [Conference Presentation]. 7th European Conference on Crystal Growth, Paris, France. http://hdl.handle.net/20.500.12708/153711
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Yan, Xinlin 
Fischer, L. 
Eguchi, Gaku 
Svagera, Robert 
Waas, Monika 
Bühler-Paschen, Silke 
Prokofiev, Andrey 
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Organisational Unit: 
E138-04 - Forschungsbereich Quantum Materials 
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Date (published): 
25-Jul-2022
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Event name: 
7th European Conference on Crystal Growth 
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Event date: 
24-Jul-2022 - 27-Jul-2022
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Event place: 
Paris, France
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Keywords: 
crystal growth; topological semimetal; stoichiometry; strongly correlated electron systems
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Research Areas: 
Materials Characterization: 20%
Design and Engineering of Quantum Systems: 80%
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Science Branch: 
1030 - Physik, Astronomie: 100%
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