Meinert, M., Geisler, M. P., Schmalhorst, J., Heinzmann, U., Arenholz, E., Hetaba, W., Stöger-Pollach, M., Hütten, A., & Reiss, G. (2014). Experimental realization of a semiconducting full-Heusler compound: Fe₂TiSi. Physical Review B, 90(8). https://doi.org/10.1103/physrevb.90.085127
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie
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Journal:
Physical Review B
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ISSN:
2469-9950
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Date (published):
Aug-2014
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Number of Pages:
5
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Publisher:
AMER PHYSICAL SOC
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Peer reviewed:
Yes
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Keywords:
Condensed Matter Physics; Electronic, Optical and Magnetic Materials
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Abstract:
Single-phase films of the full-Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4 eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to residual off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.
