Record link: 
http://hdl.handle.net/20.500.12708/156944
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Title: 
Experimental realization of a semiconducting full-Heusler compound: Fe₂TiSi
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Citation: 
Meinert, M., Geisler, M. P., Schmalhorst, J., Heinzmann, U., Arenholz, E., Hetaba, W., Stöger-Pollach, M., Hütten, A., & Reiss, G. (2014). Experimental realization of a semiconducting full-Heusler compound: Fe₂TiSi. Physical Review B, 90(8). https://doi.org/10.1103/physrevb.90.085127
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Publisher DOI: 
10.1103/physrevb.90.085127
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Meinert, Markus 
Geisler, Manuel P. 
Schmalhorst, Jan 
Heinzmann, Ulrich 
Arenholz, Elke 
Hetaba, Walid 
Stöger-Pollach, Michael 
Hütten, Andreas 
Reiss, Günter 
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Organisational Unit: 
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie 
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Journal: 
Physical Review B 
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ISSN: 
2469-9950
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Date (published): 
Aug-2014
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Number of Pages: 
5
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Publisher: 
AMER PHYSICAL SOC
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Peer reviewed: 
Yes
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Keywords: 
Condensed Matter Physics; Electronic, Optical and Magnetic Materials
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Abstract: 
Single-phase films of the full-Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4 eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to residual off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.
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Research Areas: 
Structure-Property Relationship: 10%
Materials Characterization: 20%
Quantum Modelling and Simulation: 70%
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Science Branch: 
Physik, Astronomie
Chemie
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