Record link: 
http://hdl.handle.net/20.500.12708/161743
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Title: 
Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
en
Citation: 
Kuzmik, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., Gaquière, C., Tsiakatouras, G., Deligeorgis, G., & Georgakilas, A. (2011). Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. Journal of Applied Physics, 109(8), 086106. https://doi.org/10.1063/1.3581032
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Publisher DOI: 
10.1063/1.3581032
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Publication Type: 
Artikel - Original Research Article
de
 
Article - Original Research Article
en
Language: 
English
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Authors: 
Kuzmik, Jan 
Bychikhin, Sergey 
Pogany, Dionyz 
Pichonat, Emmanuelle 
Lancry, O 
Gaquière, Christophe 
Tsiakatouras, G 
Deligeorgis, G. 
Georgakilas, Alexandros 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Journal: 
Journal of Applied Physics 
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ISSN: 
0021-8979
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Date (published): 
27-Apr-2011
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Number of Pages: 
3
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Publisher: 
AMER INST PHYSICS
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Peer reviewed: 
Yes
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Keywords: 
General Physics and Astronomy
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Research Areas: 
Modelling and Simulation: 2%
Nanoelectronics: 60%
Design and Engineering of Quantum Systems: 3%
Surfaces and Interfaces: 8%
Materials Characterization: 22%
Special and Engineering Materials: 3%
Structure-Property Relationship: 2%
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Science Branch: 
Elektrotechnik, Elektronik
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