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Record link: 
http://hdl.handle.net/20.500.12708/167258
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Title: 
Observation of the Intraexciton Autler-Townes Effect in GaAs=AlGaAs Semiconductor QuantumWells
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Citation: 
Wagner, M., Schneider, H., Stehr, D., Winnerl, S., Andrews, A. M., Schartner, S., Strasser, G., & Helm, M. (2010). Observation of the Intraexciton Autler-Townes Effect in GaAs=AlGaAs Semiconductor QuantumWells. Physical Review Letters, 105, 1674011–1674014. http://hdl.handle.net/20.500.12708/167258
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Publication Type: 
Article - Original Research Article
en
Authors: 
Wagner, M 
Schneider, H 
Stehr, Dominik 
Winnerl, S 
Andrews, Aaron Maxwell 
Schartner, Stefan 
Strasser, Gottfried 
Helm, Manfred 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Journal: 
Physical Review Letters 
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ISSN: 
0031-9007
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Date (published): 
2010
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Number of Pages: 
4
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Publisher: 
AMER PHYSICAL SOC
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Peer reviewed: 
Yes
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Research Areas: 
Photonics: 14%
Quantum Metrology and Precision Measurements: 5%
Nanoelectronics: 12%
Design and Engineering of Quantum Systems: 12%
Quantum Many-Body Systems: 5%
Surfaces and Interfaces: 10%
Materials Characterization: 10%
Composite Materials: 2%
Special and Engineering Materials: 10%
Structure-Property Relationship: 5%
Sensor Systems: 10%
Sustainable and Low Emission Mobility: 5%
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
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