<div class="csl-bib-body">
<div class="csl-entry">Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., & Selberherr, S. (2005). Electron Mobility Model for Strained-Si Devices. <i>IEEE Transactions on Electron Devices</i>, <i>52</i>(4), 527–533. https://doi.org/10.1109/ted.2005.844788</div>
</div>
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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IEEE Transactions on Electron Devices
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Electrical and Electronic Engineering
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Electronic, Optical and Magnetic Materials
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Electron Mobility Model for Strained-Si Devices
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527
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533
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Original Research Article
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IEEE Transactions on Electron Devices
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