Record link: 
http://hdl.handle.net/20.500.12708/171469
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Title: 
Electron Mobility Model for Strained-Si Devices
en
Citation: 
Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., & Selberherr, S. (2005). Electron Mobility Model for Strained-Si Devices. IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788
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Publisher DOI: 
10.1109/ted.2005.844788
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CatalogPlus: 
AC05935315
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Dhar, Siddhartha 
Kosina, Hans 
Palankovski, Vassil 
Ungersböck, Stephan Enzo 
Selberherr, Siegfried 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
IEEE Transactions on Electron Devices 
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ISSN: 
0018-9383
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Date (published): 
2005
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Number of Pages: 
7
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas: 
Computational Materials Science: 80%
Modelling and Simulation: 20%
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Science Branch: 
Elektrotechnik, Elektronik
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