<div class="csl-bib-body">
<div class="csl-entry">Lades, M., Berz, D., Schmid, U., Sheppard, S. T., Kaminski, N., Wondrak, W., & Wachutka, G. (1999). Numerical Simulation of Implanted Top-Gate 6H-SiC JFET Characteristics. <i>Materials Science and Engineering: B</i>, <i>61–62</i>, 415–418. https://doi.org/10.1016/s0921-5107(98)00545-5</div>
</div>
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dc.identifier.issn
0921-5107
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/175294
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dc.description.abstract
A detailed numerical analysis of implanted top-gate 6H-SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers.
en
dc.language.iso
en
-
dc.publisher
ELSEVIER
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dc.relation.ispartof
Materials Science and Engineering: B
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dc.subject
Mechanical Engineering
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dc.subject
Mechanics of Materials
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dc.subject
Condensed Matter Physics
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dc.subject
General Materials Science
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dc.title
Numerical Simulation of Implanted Top-Gate 6H-SiC JFET Characteristics
en
dc.type
Artikel
de
dc.type
Article
en
dc.contributor.affiliation
Technical University of Munich, Germany
-
dc.contributor.affiliation
Technical University of Munich, Germany
-
dc.contributor.affiliation
Daimler and Benz Foundation, Germany
-
dc.contributor.affiliation
Daimler and Benz Foundation, Germany
-
dc.contributor.affiliation
Daimler and Benz Foundation, Germany
-
dc.contributor.affiliation
Daimler and Benz Foundation, Germany
-
dc.contributor.affiliation
Technical University of Munich, Germany
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dc.description.startpage
415
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dc.description.endpage
418
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dc.type.category
Original Research Article
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tuw.container.volume
61-62
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
dcterms.isPartOf.title
Materials Science and Engineering: B
-
tuw.publisher.doi
10.1016/s0921-5107(98)00545-5
-
dc.identifier.eissn
1873-4944
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dc.description.numberOfPages
4
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wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik
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wb.sciencebranch.oefos
25
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item.grantfulltext
none
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item.cerifentitytype
Publications
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item.fulltext
no Fulltext
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item.openairetype
research article
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item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
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item.languageiso639-1
en
-
crisitem.author.dept
Technical University of Munich
-
crisitem.author.dept
Technical University of Munich
-
crisitem.author.dept
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.dept
Daimler and Benz Foundation
-
crisitem.author.dept
Daimler and Benz Foundation
-
crisitem.author.dept
Daimler and Benz Foundation
-
crisitem.author.dept
Technical University of Munich
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik