Record link: 
http://hdl.handle.net/20.500.12708/175294
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Title: 
Numerical Simulation of Implanted Top-Gate 6H-SiC JFET Characteristics
en
Citation: 
Lades, M., Berz, D., Schmid, U., Sheppard, S. T., Kaminski, N., Wondrak, W., & Wachutka, G. (1999). Numerical Simulation of Implanted Top-Gate 6H-SiC JFET Characteristics. Materials Science and Engineering: B, 61–62, 415–418. https://doi.org/10.1016/s0921-5107(98)00545-5
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Publisher DOI: 
10.1016/s0921-5107(98)00545-5
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Lades, M. 
Berz, D. 
Schmid, Ulrich 
Sheppard, S.T. 
Kaminski, N. 
Wondrak, W. 
Wachutka, G. 
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Journal: 
Materials Science and Engineering: B 
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ISSN: 
0921-5107
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Date (published): 
30-Jul-1999
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Number of Pages: 
4
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Publisher: 
ELSEVIER
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Peer reviewed: 
Yes
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Keywords: 
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science
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Abstract: 
A detailed numerical analysis of implanted top-gate 6H-SiC JFET structures was performed revealing the influence of a non-uniform channel doping profile. Based on structural parameters extracted from simulations of the device characteristics at various bias conditions and temperatures, we obtain channel mobility parameters close to Hall data for bulk epitaxial layers.
en
Science Branch: 
Elektrotechnik, Elektronik
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