<div class="csl-bib-body">
<div class="csl-entry">Wind, L., Sistani, M., Fuchsberger, A., Behrle, R., Nazzari, D., Aberl, J., Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023, May 29). <i>Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts</i> [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. http://hdl.handle.net/20.500.12708/187183</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/187183
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dc.language.iso
en
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dc.subject
field-effect
en
dc.subject
transistor
en
dc.subject
SiGe
en
dc.subject
crystalline
en
dc.title
Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Swiss Federal Laboratories for Materials Science and Technology, Switzerland
