Record link: 
http://hdl.handle.net/20.500.12708/187183
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Title: 
Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
en
Citation: 
Wind, L., Sistani, M., Fuchsberger, A., Behrle, R., Nazzari, D., Aberl, J., Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023, May 29). Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts [Conference Presentation]. European Materials Research Society (E-MRS) Spring Meeting 2023, France. http://hdl.handle.net/20.500.12708/187183
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Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
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Authors: 
Wind, Lukas 
Sistani, Masiar 
Fuchsberger, Andreas 
Behrle, Raphael 
Nazzari, Daniele 
Aberl, Johannes 
Navarrete, Enrique 
Vukŭsić, Lada 
Brehm, Moritz 
Schweizer, Peter 
Vogl, Lilian 
Maeder, Xavier 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
29-May-2023
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Event name: 
European Materials Research Society (E-MRS) Spring Meeting 2023 
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Event date: 
29-May-2023 - 2-Jun-2023
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Event place: 
France
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Keywords: 
field-effect; transistor; SiGe; crystalline
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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