Forschungsbereich Nanoelektronische Bauelemente

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Organization Name (de) Name der Organisation (de)
E362-02 - Forschungsbereich Nanoelektronische Bauelemente
 
Code Kennzahl
E362-02
 
Type of Organization Organisationstyp
Research Division
 
Parent OrgUnit Übergeordnete Organisation
Active Aktiv
 

OrgUnit's Publications


Results 1-20 of 41 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Behrle, R. ; Sistani, M. ; Lugstein, A. ; Sadre Momtaz, Z. ; den Hertog, M. I. ; Pogany, D. ; Weber, W. M. Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistorsArticle Artikel 5-Jun-2023
2Sistani, Masiar ; Behrle, Raphael ; Barth, Sven ; Murphey, Corban G.E. ; Cahoon, James ; den Hertog, Martien I. ; Sadre‐Momtaz, Zahra ; Weber, Walter Michael Electrical Transport in Monolithic Al-Si/Al-Ge Heterojunction based Nanowire Schottky Barrier Field-Effect TransistorsPresentation Vortrag30-May-2023
3Behrle, Raphael ; Wind, Lukas ; Sistani, Masiar ; Sadre‐Momtaz, Zahra ; den Hertog, Martien I. ; Murphey, Corban G. E. ; Cahoon, James F. ; Weber, Walter Michael Reconfigurable Silicon Transistors with Single-Elementary Metal Contacts for Complementary and Combinational LogicPresentation Vortrag30-May-2023
4Wind, Lukas ; Sistani, Masiar ; Fuchsberger, Andreas ; Behrle, Raphael ; Nazzari, Daniele ; Aberl, Johannes ; Navarrete, Enrique ; Vukŭsić, Lada ; Brehm, Moritz ; Schweizer, Peter ; Vogl, Lilian ; Maeder, Xavier ; Weber, Walter Michael Reconfigurable Field-Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al ContactsPresentation Vortrag29-May-2023
5Song, Zehao ; Sistani, Masiar ; Schwingshandl, Fabian ; Lugstein, Alois Controlling Hot Charge Carrier Transfer in Monolithic Al-Si-Al Heterostructures for Plasmonic On-Chip Energy HarvestingArticle Artikel 10-May-2023
6Weber, Walter Michael Silicon-Germanium Nanosheet Transistors, Contact and Electronic Transport Properties delivering Runtime Reconfigurable TransistorsPresentation Vortrag15-Feb-2023
7Bradley, R. Mark ; Hobler, Gerhard Sputter yields of surfaces with nanoscale textures: Analytical results and Monte Carlo simulationsArticle Artikel 14-Feb-2023
8Behrle-2023-Nanomaterials-vor.pdf.jpgBehrle, Raphael ; Krause Vanessa ; Seifner, Michael S. ; Köstler, Benedikt ; Dick, Kimberly A. ; Wagner, Matthias ; Sistani, Masiar ; Barth, Sven Electrical and Structural Properties of Si₁−ₓGeₓ Nanowires Prepared from a Single-Source PrecursorArticle Artikel 2-Feb-2023
9Fuchsberger, Andreas ; Wind, Lukas ; Sistani, Masiar ; Behrle, Raphael ; Nazzari, Daniele ; Aberl, Johannes ; Prado Navarrete, Enrique ; Vukŭsić, Lada ; Brehm, Moritz ; Schweizer, Peter ; Vogl, Lilian ; Maeder, Xavier ; Weber, Walter Michael Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al ContactsArticle Artikel 2023
10Kang-2022-Genome Biology-vor.pdf.jpgKang, Senbai ; Borgsmüller, Nico ; Valecha, Monica ; Kuipers, Jack ; Alves, Joao M ; Prado Lopez, Sonia ; Chantada, Débora ; Beerenwinkel, Niko ; Posada, David ; Szczurek, Ewa SIEVE: joint inference of single-nucleotide variants and cell phylogeny from single-cell DNA sequencing dataArticle Artikel 30-Nov-2022
11Koestler-2022-Inorganic Chemistry-vor.pdf.jpgKöstler, Benedikt ; Jungwirth, Felix ; Achenbach, Luisa ; Sistani, Masiar ; Bolte, Michael ; Lerner, Hans-Wolfram ; Albert, Philipp ; Wagner, Matthias ; Barth, Sven Mixed-Substituted Single-Source Precursors for Si1-xGex Thin Film DepositionArticle Artikel 31-Oct-2022
12Wind, Lukas ; Sistani, Masiar ; Demirkiran Özgür ; Böckle, Raphael ; Fuchsberger Andreas ; Schweizer, Peter ; Maeder Xavier ; Michler, Johann ; Weber, Walter Michael Metal-Semiconductor based Reconfigurable ElectronicsPresentation Vortrag6-Oct-2022
13Jungwirth, Felix ; Porrati, Fabrizio ; Knez, Daniel ; Sistani, Masiar ; Plank, Harald ; Huth, Michael ; Barth, Sven Focused Ion Beam vs Focused Electron Beam Deposition of Cobalt Silicide Nanostructures Using Single-Source Precursors: Implications for Nanoelectronic Gates, Interconnects, and SpintronicsArticle Artikel 21-Sep-2022
14Sistani, Masiar ; Wind, Lukas ; Böckle, Raphael ; Smoliner, Jürgen ; Weber, Walter Michael ; Vukŭsić, Lada ; Aberl, Johannes ; Brehm, Moritz ; Schweizer, Peter Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al ContactsInproceedings Konferenzbeitrag20-Sep-2022
15Sistani, Masiar ; Wind, Lukas ; Behrle, Raphael ; Smoliner, Jürgen ; Weber, Walter Michael ; Vukusic, Lada ; Aberl, Johannes ; Brehm, Moritz ; Schweizer, Peter Composition Dependent Electrical Transport in SiGe Nanosheets with Monolithic Single-Elementary Al ContactsPresentation Vortrag20-Sep-2022
16Sistani, Masiar ; Behrle, Raphael ; Weber, Walter Michael ; Luong, Minh Anh ; den Hertog, Martien Gate-Tunable Negative Differential Resistance Enabling the Functional Diversification of Ge-Based Nanoelectronic DevicesPresentation Vortrag19-Sep-2022
17Nazzari, Daniele ; Solfronk, Oliver ; Sistani, Masiar ; Weber, Walter Michael Fabrication and evaluation of different passivation layers for the Ge-Insulator interface using Plasma-Enhanced ALDPresentation Vortrag13-Sep-2022
18Nazzari, Daniele ; Sistani, Masiar ; Behrle, Raphael ; Wind, Lukas ; Lugstein, Alois ; Weber, Walter Michael Interface engineering of Ge nanosheets: evaluation of different high-k materials for improving device performancesPresentation Vortrag13-Sep-2022
19Nazzari, Daniele ; Genser, Jakob Alexander ; Ritter, Viktoria ; Bethge, Ole ; Bertagnolli, Emmerich ; Grasser, Tibor ; Weber, Walter Michael ; Lugstein, Alois Epitaxial growth of crystalline CaF2 on silicene by molecular beam epitaxyPresentation Vortrag12-Sep-2022
20Sistani, Masiar ; Behrle, Raphael ; Luong, Minh Anh ; den Hertog, Martien I. ; Lugstein, Alois ; Weber, Walter Michael Programmable negative differential Resistance in Ge Nanowire TransistorsPresentation Vortrag11-Sep-2022