Forschungsbereich Nanoelektronische Bauelemente

Organization Name (de) Name der Organisation (de)
E362-02 - Forschungsbereich Nanoelektronische Bauelemente
 
Code Kennzahl
E362-02
 
Type of Organization Organisationstyp
Research Division
Parent OrgUnit Übergeordnete Organisation
 
Active Aktiv
 


Results 1-20 of 112 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Behrle-2025-Nanoscale Advances-vor.pdf.jpgBehrle, Raphael ; Pacheco-Sanchez, Aníbal ; Barth, Sven ; Weber, Walter Michael ; Sistani, Masiar Thermionic injection analysis in germanium nanowire Schottky junction FETs by means of 1D and 3D extraction methodsArticle Artikel 21-Apr-2025
2Wind-2025-Solid-State Electronics-vor.pdf.jpgWind, Lukas ; Preiß, Stefan ; Nazzari, Daniele ; Aberl, Johannes ; Navarrete, Enrique Prado ; Brehm, Moritz ; Vogl, Lilian ; Minor, Andrew M. ; Sistani, Masiar ; Weber, Walter M. Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contactsArticle Artikel Apr-2025
3Jeon-2025-IEEE Journal of the Electron Devices Society-vor.pdf.jpgJeon, Dae-Young ; Park, So Jeong ; Pregl, Sebastian ; Trommer, Jens ; Heinzig, André ; Mikolajick, Thomas ; Weber, Walter M. Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire ArraysArticle Artikel 4-Mar-2025
4Nazzari-2025-ACS APPLIED MATERIALS  INTERFACES-vor.pdf.jpgNazzari, Daniele ; Wind, Lukas ; Sistani, Masiar ; Mayr, Dominik ; Kim, Kihye ; Wahler, Viktor ; Weber, Walter M. Nonvolatile Reconfigurable Transistor via Ferroelectrically Induced Current ModulationArticle Artikel 19-Feb-2025
5Sistani, Masiar ; Fuchsberger, Andreas ; Behrle, Raphael ; Wind, Lukas ; Nazzari, Daniele ; Aberl, Johannes ; Prado Navarrete, Enrique ; Brehm, Moritz ; Vogl, Lilian ; Schweizer, Peter ; Lellig, Sebastian ; Maeder Xavier ; Weber, Walter Michael Multifunctional Si and Ge based Schottky Barrier Field-Effect TransistorsPresentation Vortrag14-Feb-2025
6Nazzari, Daniele ; Wind, Lukas ; Sistani, Masiar ; Mayr, D ; Kim, K. ; Wahler, Viktor ; Weber, Walter Michael Ferroelectrically Enhanced Reconfigurable Transistors: From Selective Charge Carrier Control to Neuromorphic ApplicationsPresentation Vortrag12-Feb-2025
7Bestelink-2024-NANO FUTURES-vor.pdf.jpgBestelink, Eva ; Galderisi, Giulio ; Golec, Patryk ; Han, Yi ; Iniguez, Benjamin ; Kloes, Alexander ; Knoch, Joachim ; Matsui, Hiroyuki ; Mikolajick, Thomas ; Niang, Kham M ; Richstein, Benjamin ; Schwarz, Mike ; Sistani, Masiar ; Sporea, Radu A ; Trommer, Jens ; Weber, Walter Michael ; Zhao, Qing-Tai ; Calvet, Laurie E Roadmap for Schottky barrier transistorsArticle Artikel 27-Dec-2024
8Karami, Neda ; amra mujadzic ; sasha mendjan ; Wanzenböck, Heinz ; Prado Lopez, Sonia Doxorubicin induced cardiotoxicity assessment using Impedance spectroscopy on human iPSC-derived cardioidsPresentation Vortrag2-Dec-2024
9Kigili, Seyda ; Knafl, Sebastian ; Karami, Neda ; Wanzenböck, Heinz ; Prado Lopez, Sonia Induction of Epithelial-Mesenchymal Transition in Colorectal Cancer through Chemical Hypoxia in Microfluidic ChipPresentation Vortrag2-Dec-2024
10Knafl, Sebastian ; Karami, Neda ; Kigili, Seyda ; Wanzenböck, Heinz ; Prado Lopez, Sonia Personalized Medicine on Interdigitated Electrode Chips: Towards Testing Anti-Cancer TreatmentsPresentation Vortrag2-Dec-2024
11Fuchsberger-2024-IEEE Transactions on Electron Devices-vor.pdf.jpgFuchsberger, Andreas ; Wind, Lukas ; Nazzari, Daniele ; Navarrete, Enrique Prado ; Aberl, Johannes ; Brehm, Moritz ; Sistani, Masiar ; Weber, Walter M. Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge TransistorsArticle Artikel Dec-2024
12Krainer-2024-IEEE Transactions on Electron Devices-vor.pdf.jpgKrainer, Rudolf ; Jomar, Hossam ; Rockermeier, Hubert ; Holland, Steffen ; Ritter, Hans-Martin ; Kumar, Vasantha ; Pogany, Dionyz I – V Hysteresis in ESD Protection SCR Due to Jumping Between Bulk and Surface Current PathsArticle Artikel Dec-2024
13Stabentheiner M ; Novak M ; Taylor, A.A. ; Knuuttila L. ; Jamnig A. ; Pogany, Dionyz ; Ostermaier, Clemens Investigation of electrically active dislocations in quasi-vertical GaN-on-Si diodesPresentation Vortrag7-Nov-2024
14Höflich, Katja ; Hobler, Gerhard ; Allen, Frances ; Wirtz, Tom ; Rius, Gemma ; Hlawacek, Gregor Roadmap for Focused Ion Beam TechnologiesInproceedings Konferenzbeitrag 31-Oct-2024
15Stabentheiner, Manuel ; Tilly, D. ; Schinnerl, T. ; Taylor, A. A. ; Javernik, P. ; Novak, M. ; Ostermaier, C. ; Pogany, Dionyz Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si SubstratesInproceedings Konferenzbeitrag 28-Oct-2024
16Karami, Neda ; mujadzic amra ; sasha mendjan ; Wanzenböck, Heinz ; Prado Lopez, Sonia Low shear stress milli fluidic combined with planar MEA for simultaneous monitoring of impedance and field potential recording of electrogenic organoids.Presentation Vortrag14-Oct-2024
17Maraspini, Francesco ; David, Mauro ; Sistani, Masiar ; Wind, Lukas ; Schwingshandl, Fabian ; Buisson, O. ; Naud, C. ; Weber, Walter Michael ; Lugstein, Alois Monolithic Superconductor-Semiconductor Quantum CircuitsPresentation Vortrag26-Sep-2024
18Hofer, Anton Marco ; Koller, Christian ; Modolo, Nicola ; Pogany, Dionyz ; Ostermaier, Clemens Improved CV characterization technique for interface state evaluation in Si3N4/n-GaN MIS CapacitorsInproceedings Konferenzbeitrag 25-Sep-2024
19Wieland, Dominik ; Butej, Boris ; Stabentheiner, Manuel ; Koller, Christian ; Pogany, Dionyz ; Ostermaier, Clemens Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTsInproceedings Konferenzbeitrag 25-Sep-2024
20Behrle, Raphael ; Murphey, Corban G. E. ; Cahoon, James F. ; Barth, Sven Christian ; Den Hertog, Martien I. ; Weber, Walter Michael ; Sistani, Masiar Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure TransistorsInproceedings Konferenzbeitrag9-Sep-2024