Record link: 
http://hdl.handle.net/20.500.12708/199907
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Title: 
Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts
en
Citation: 
Wind, L., Preiß, S., Nazzari, D., Bažíková, M., Aberl, J., Prado Navarrete, E., Brehm, M., Vogl, L., Sistani, M., & Weber, W. M. (2024, May 15). Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts [Conference Presentation]. 10th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024), Athen, Greece. http://hdl.handle.net/20.500.12708/199907
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Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
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Authors: 
Wind, Lukas 
Preiß, Stefan 
Nazzari, Daniele 
Bažíková, Martina 
Aberl, Johannes 
Prado Navarrete, Enrique 
Brehm, Moritz 
Vogl, Lilian 
Sistani, Masiar 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
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Date (published): 
15-May-2024
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Event name: 
10th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2024) 
en
Event date: 
15-May-2024 - 17-May-2024
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Event place: 
Athen, Greece
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Keywords: 
GeSn; transistors; optoelectronics
en
Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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