Fuchsberger, A., Wind, L., Nazzari, D., Navarrete, E. P., Aberl, J., Brehm, M., Sistani, M., & Weber, W. M. (2024). Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors. IEEE Transactions on Electron Devices, 71(12), 7277–7280. https://doi.org/10.1109/TED.2024.3485600
The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance and functionality. Here, we report on Ge-based multigate Schottky barrier field-effect transistors (SBFETs) operated in an NDR mode. A detailed and systematic study of the influence of electrostatic gating in single transistors as well as cascode circuits is carried out. We experimentally demonstrate that a single multigate SBFET can replace a cascode circuit of individual NDR devices. The realized devices and circuits contribute to compact logic gates and memory devices based on NDR complementing conventional CMOS technology.
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Forschungsschwerpunkte:
Materials Characterization: 50% Surfaces and Interfaces: 50%
CC BY 4.0
