Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors

Abstract

The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance and functionality. Here, we report on Ge-based multigate Schottky barrier field-effect transistors (SBFETs) operated in an NDR mode. A detailed and systematic study of the influence of electrostatic gating in single transistors as well as cascode circuits is carried out. We experimentally demonstrate that a single multigate SBFET can replace a cascode circuit of individual NDR devices. The realized devices and circuits contribute to compact logic gates and memory devices based on NDR complementing conventional CMOS technology.