Wind, L., Preiß, S., Nazzari, D., Aberl, J., Navarrete, E. P., Brehm, M., Vogl, L., Minor, A. M., Sistani, M., & Weber, W. M. (2025). Si/Ge₁₋ₓSnₓ/Si transistors with highly transparent Al contacts. Solid-State Electronics, 225, Article 109069. https://doi.org/10.1016/j.sse.2025.109069
GeSn; Transistor; Transparent contacts; Transport investigations; Multi-gate architecture
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Abstract:
We study the monolithic quasi-ohmic contact formation with single-elementary Al to Ge₁₋ₓSnₓ channel devices with various Sn concentrations between 0.5 % and 4 %. Thereby we investigate the influence of increasing Sn content on the electrical transport properties in field-effect transistors for a wide temperature range between 77 K and 400 K. At low temperatures, the devices exhibit improved performance metrics, promising for cryo-CMOS applications. Compared to pure Ge control devices, the introduction of Sn into the channel leads to a 20 times increased on-current. In a multi-gate architecture, we analyze the decoupled influence of the carrier injection through the metal–semiconductor junction and the channel conduction.
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Project title:
Metastable nanoscale solid solutions and their integration: I 5383-N (FWF - Österr. Wissenschaftsfonds)
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Project (external):
Austrian Science Fund (FWF)
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Project ID:
Y1238-N36
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Research Areas:
Materials Characterization: 50% Surfaces and Interfaces: 50%
CC BY 4.0
