Record link: 
http://hdl.handle.net/20.500.12708/217191
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Title: 
A Schottky Barrier Field-Effect Transistor Platform with Variable Ge Content on SOI
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Citation: 
Fuchsberger, A., Wind, L., Pacheco-Sanchez A., Prado-Navarrete E, Aberl, J., Brehm, M., Schweizer, P., Vogl L, Sistani, M., & Weber, W. M. (2025, May). A Schottky Barrier Field-Effect Transistor Platform with Variable Ge Content on SOI [Conference Presentation]. 11th Joint EuroSOI Workshop and International Conference on Ultimate Integration of Silicon (EuroSOI-ULIS 2025), Warsaw, Poland. http://hdl.handle.net/20.500.12708/217191
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Fuchsberger, Andreas 
Wind, Lukas 
Pacheco-Sanchez A. 
Prado-Navarrete E 
Aberl, Johannes 
Brehm, Moritz 
Schweizer, Peter 
Vogl L 
Sistani, Masiar 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
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Date (published): 
May-2025
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Event name: 
11th Joint EuroSOI Workshop and International Conference on Ultimate Integration of Silicon (EuroSOI-ULIS 2025) 
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Event date: 
14-May-2025 - 16-May-2025
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Event place: 
Warsaw, Poland
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Keywords: 
Transistor; Schottky barrier; Ge; SOI
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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