Record link: 
http://hdl.handle.net/20.500.12708/200987
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Title: 
Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors
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Citation: 
Behrle, R., Murphey, C. G. E., Cahoon, J. F., Barth, S. C., Den Hertog, M. I., Weber, W. M., & Sistani, M. (2024). Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors. In GADEST 2024. 20th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), Bad Schandau, Germany.
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Behrle, Raphael 
Murphey, Corban G. E. 
Cahoon, James F. 
Barth, Sven Christian 
Den Hertog, Martien I. 
Weber, Walter Michael 
Sistani, Masiar 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
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Published in: 
GADEST 2024 
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Date (published): 
9-Sep-2024
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Event name: 
20th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) 
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Event date: 
8-Sep-2024 - 13-Sep-2024
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Event place: 
Bad Schandau, Germany
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Number of Pages: 
2
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Keywords: 
transistors; Al-Si; heterostructures; Al-Ge; nanowire
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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