Record link: 
http://hdl.handle.net/20.500.12708/219804
-
Title: 
Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors
en
Citation: 
Fuchsberger, A., Sistani, M., Eysin, K., Wind, L., Prado-Navarrete E, Aberl, J., Brehm, M., Ratschinski I, Hiller D, & Weber, W. M. (2025, September 16). Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors [Conference Presentation]. The 2025 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland. http://hdl.handle.net/20.500.12708/219804
-
Publication Type: 
Presentation - Conference Presentation
en
Language: 
English
-
Authors: 
Fuchsberger, Andreas 
Sistani, Masiar 
Eysin, Kilian 
Wind, Lukas 
Prado-Navarrete E 
Aberl, Johannes 
Brehm, Moritz 
Ratschinski I 
Hiller D 
Weber, Walter Michael 
-
Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
-
Date (published): 
16-Sep-2025
-
Event name: 
The 2025 Fall Meeting of the European Materials Research Society (E-MRS) 
en
Event date: 
15-Sep-2025 - 18-Sep-2025
-
Event place: 
Warsaw, Poland
-
Keywords: 
Schottky Barrier; SiGe; transistors
en
Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
-
Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
-
Appears in Collections:
Presentation

Show full item record

Page view(s)

33
checked on Oct 9, 2025

Google ScholarTM

Check