Record link: 
http://hdl.handle.net/20.500.12708/219804
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Title: 
Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors
en
Citation: 
Fuchsberger, A., Sistani, M., Eysin, K., Wind, L., Prado-Navarrete E, Aberl, J., Brehm, M., Ratschinski I, Hiller D, & Weber, W. M. (2025, September 16). Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors [Conference Presentation]. The 2025 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland. http://hdl.handle.net/20.500.12708/219804
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Fuchsberger, Andreas 
Sistani, Masiar 
Eysin, Kilian 
Wind, Lukas 
Prado-Navarrete E 
Aberl, Johannes 
Brehm, Moritz 
Ratschinski I 
Hiller D 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
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Date (published): 
16-Sep-2025
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Event name: 
The 2025 Fall Meeting of the European Materials Research Society (E-MRS) 
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Event date: 
15-Sep-2025 - 18-Sep-2025
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Event place: 
Warsaw, Poland
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Keywords: 
Schottky Barrier; SiGe; transistors
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Research Areas: 
Materials Characterization: 50%
Surfaces and Interfaces: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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