Record link: 
http://hdl.handle.net/20.500.12708/221810
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Title: 
Non-Volatile Reconfigurable Transistor via Ferroelectric Modulation: Fabrication Strategy and TCAD Simulations
en
Citation: 
Nazzari, D., Rossi C., Wahler, V., Wind, L., Sistani, M., Esseni, D., & Weber, W. M. (2025, October 9). Non-Volatile Reconfigurable Transistor via Ferroelectric Modulation: Fabrication Strategy and TCAD Simulations [Conference Presentation]. International Semiconductor Conference - CAS 2025, Sinaia, Romania.
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Publication Type: 
Presentation - Conference Presentation
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Language: 
English
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Authors: 
Nazzari, Daniele 
Rossi C. 
Wahler, Viktor 
Wind, Lukas 
Sistani, Masiar 
Esseni, D. 
Weber, Walter Michael 
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Organisational Unit: 
E362-02 - Forschungsbereich Nanoelektronische Bauelemente 
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen 
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Date (published): 
9-Oct-2025
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Event name: 
International Semiconductor Conference - CAS 2025 
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Event date: 
7-Oct-2025 - 11-Oct-2025
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Event place: 
Sinaia, Romania
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Keywords: 
Non-Volatile Reconfigurability; Beyond Von Neumann; Ferroelectricity
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Research Areas: 
Materials Characterization: 40%
Nanoelectronics: 60%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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