Fuchsberger, A., Verdianu, A., Wind, L., Nazzari, D., Prado Navarrete, E., Wilfingseder, C., Aberl, J., Brehm, M., Hartmann, J.-M., Sistani, M., & Weber, W. M. (2025). Electrostatic gating in Ge-based reconfigurable field-effect transistors. IEEE Transactions on Electron Devices, 72(4), 1631–1636. https://doi.org/10.1109/TED.2025.3545802
Nanoscale Ge has been identified as a promising channel material to enable a reduction of power consumption and an enhancement of the switching speed of reconfigurable field-effect transistors (RFETs). Such multigate transistors allow the run-time switching between n- and p-type operation in a single device. In this work, the specific characteristics and benefits of dual- and triple-independent-gate Ge-based RFETs are discussed by a systematic temperature-dependent investigation of the electrical-gating-related charge carrier transport. While the dual-gate configuration features both a unipolar and ambipolar operation mode, the triple-gate configuration offers bias-independent unipolarity with a symmetric behavior regarding its gating capabilities and on-state currents with an enhanced on-to-off-state ratio by one order of magnitude.
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Projekttitel:
Metastable nanoscale solid solutions and their integration: I 5383-N (FWF - Österr. Wissenschaftsfonds)
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Projekt (extern):
European Union (EU) Austrian Science Fund (FWF)
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Projektnummer:
101135316 10.55776/Y1238
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Forschungsschwerpunkte:
Materials Characterization: 50% Surfaces and Interfaces: 50%
CC BY 4.0
