<div class="csl-bib-body">
<div class="csl-entry">Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In <i>9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023</i> (pp. 1–2). http://hdl.handle.net/20.500.12708/189602</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/189602
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dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.subject
Back-Hopping
en
dc.subject
Spin Transfer Torques
en
dc.subject
Ultra-Scaled MRAM Cells
en
dc.subject
Perpendicular Magnetic Anisotropy
en
dc.subject
Writing Error
en
dc.subject
Multi-Level Cells
en
dc.title
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
Silvaco (United Kingdom), United Kingdom of Great Britain and Northern Ireland (the)
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dc.description.startpage
1
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dc.description.endpage
2
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dc.relation.grantno
P300686
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dc.type.category
Abstract Book Contribution
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tuw.booktitle
9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023
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tuw.peerreviewed
true
-
tuw.project.title
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik
