Record link: 
http://hdl.handle.net/20.500.12708/189602
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Title: 
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping
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Citation: 
Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., & Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2). http://hdl.handle.net/20.500.12708/189602
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Publication Type: 
Inproceedings - Abstract Book Contribution
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Language: 
English
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Authors: 
Bendra, Mario 
Fiorentini, Simone 
Selberherr, Siegfried 
Goes, Wolfgang 
Sverdlov, Viktor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E360-01 - Forschungsbereich Mikroelektronik 
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Published in: 
9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 
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Date (published): 
10-May-2023
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Event name: 
9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 
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Event date: 
10-May-2023 - 12-May-2023
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Event place: 
Tarragona, Spain
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Number of Pages: 
2
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Peer reviewed: 
Yes
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Keywords: 
Back-Hopping; Spin Transfer Torques; Ultra-Scaled MRAM Cells; Perpendicular Magnetic Anisotropy; Writing Error; Multi-Level Cells
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Project title: 
CD-Labor für Nichtflüchtige magnetisch-resistive Speicher und Logik: P300686 (Christian Doppler Forschungsgesells) 
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Link (external): 
https://wwwa.fundacio.urv.cat/congressos/eurosoi-ulis2023/program
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Research Areas: 
Modeling and Simulation: 100%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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